Samsung Starts 3nm Semiconductor Chip Production With GAA Architecture

Last Updated on June 30, 2022 by Asif Iqbal Shaik

The South Korean technology giant Samsung Electronics announced earlier today that it has started the initial production of its 3nm semiconductor chips. The company confirmed through its newsroom that the production of 3nm chips will begin at its Hwaseong factory in South Korea. Samsung Foundry will manufacture 3nm chips with GAA (Gate All Around) transistor architecture, which will improve performance and power efficiency compared to 4nm and 5nm chips.

Samsung Begins Chip Production Using 3nm Process Technology

According to Samsung Foundry, with Multi-Bridge-Channel FET (MBCFET) GAA technology, 3nm chips will offer improved power efficiency by reducing the supply voltage level and enhancing performance by increasing drive current capability. The company said that it is using nanosheet transistors in semiconductor chips for high-performance processors and low-power computing applications.

Compared to the nanowires used in previous chip manufacturing processes, Samsung’s proprietary technology utilises nanosheets with wider channels, which allow higher performance and greater energy efficiency. By using the 3nm GAA technology, companies can adjust the channel width of the nanosheet to optimize power usage and performance as per their needs.

Also Read: TSMC To Start Production Of 3nm Chips Later This Year

Compared to 5nm chips, the first-generation 3nm chip will offer 23% improved performance, a 45% reduction in power usage, and a 16% area reduction. Second-generation 3nm chips, which will be manufactured sometime next year, will offer 50% reduced power consumption, a 30% faster performance, and a 35% lower area compared to 5nm chips.

Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics, said:

Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as foundry industry’s first High-K Metal Gate, FinFET, as well as EUV. We seek to continue this leadership with the world’s first 3nm process with the MBCFETTM. We will continue active innovation in competitive technology development and build processes that help expedite achieving maturity of technology.