Last month, Samsung said that it has started making semiconductors employing the Gate-All-Around (GAA) transistor design at a 3-nanometer (nm) manufacturing node. Today, at an event in South Korea, the company declared that the V1 line (EUV only) at Hwaseong Campus is now shipping the first 3nm chip produced using the Gate All Around technology.
Samsung stated that 3nm GAA chip production will ultimately be added to the Pyeongtaek Campus. Meanwhile TSMC, Samsung’s main competitor in the semiconductor industry, is anticipated to start producing 3nm chips in the fourth quarter of 2022.
One of the first users of Samsung’s new cutting-edge technique may be AMD or Qualcomm. Some industry sources believe that Nvidia would be among the first companies to use Samsung’s 3nm node, although this may not be the case, considering the company’s recent overbooking problems. Apart from this, rumors also point toward Samsung itself being the very first customer by producing the upcoming Exynos 2300 mobile chip.
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The company has already experienced a challenging year as a result of the flawed design and manufacturing processes, and part of the smartphone SoC business has moved away from them and towards their competitor TSMC. The introduction of this 3nm technology may change the tide for Samsung, but this could only become apparent over time.
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