Starting next week, Samsung is anticipated to announce the beginning of the mass manufacturing of 3nm chips, according to Yonhap News. In doing so, the company will surpass TSMC, whose 3nm chip manufacturing is anticipated to start in the second half of this year.
This comes at a crucial time for Samsung, which is being criticised for a string of problematic chips, including the Qualcomm Snapdragon 888 and Exynos 2100. In comparison to its 5nm process, Samsung’s 3nm node is anticipated to have a 35 percent drop in area, a 30 percent increase in performance, and a 50 percent decrease in power consumption.
By transitioning to a Gate-All-Around (GAA) architecture for transistors, the company will be able to meet these targets. The foundry can downsize transistors without affecting their ability to conduct current, which is the next stage after FinFET. The MBCFET flavour is the GAAFET design utilised in the 3nm node.
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In October last year, Samsung stated that the yield of its 3nm process is “approaching a similar level to the 4nm process”. An MBCFET-based 2nm node is scheduled to debut in 2025, and a second-generation 3nm node is anticipated in 2023.